feb.1999 outline drawing & circuit diagram dimensions in mm application inverters, servo drives, dc motor controllers, nc equipment, welders QM30TB-24B ? i c collector current .......................... 30a ? v cex collector-emitter voltage ......... 1200v ? h fe dc current gain............................. 750 ? insulated type ? ul recognized yellow card no. e80276 (n) file no. e80271 mitsubishi transistor modules QM30TB-24B medium power switching use insulated type 7.5 21 7.5 21 7.5 16.5 19 28.5 28.5 21.5 bup eup bvp evp bwp ewp uvw bun eun bvn evn bwn ewn p n 127 98 110 ?.2 25 18 40 56 2 f 5.5 p n bup eup u bun eun bvp bwp evp ewp vw bvn bwn evn ewn 26.5 17.5 label tab#250, t=0.8 tab#110, t=0.5 7.5 25.6 note: all transistor units are 4-stage darlingtons.
feb.1999 conditions i c =1a, v eb =2v v eb =2v emitter open collector open dc dc (forward diode current) t c =25 c dc peak value of one cycle of 60hz (half wave) charged part to case, ac for 1 minute mounting screw m5 typical value ratings 1200 1200 1200 7 30 30 310 2 300 C40~+150 C40~+125 2500 1.47~1.96 15~20 500 absolute maximum ratings (tj=25 c, unless otherwise noted) symbol v cex (sus) v cex v cbo v ebo i c Ci c p c i b Ci csm t j t stg v iso parameter collector-emitter voltage collector-emitter voltage collector-base voltage emitter-base voltage collector current collector reverse current collector dissipation base current surge collector reverse current (forward diode current) junction temperature storage temperature isolation voltage mounting torque weight unit v v v v a a w a a c c v nm kgcm g mitsubishi transistor modules QM30TB-24B medium power switching use insulated type electrical characteristics (tj=25 c, unless otherwise noted) unit ma ma ma v v v m s m s m s c/w c/w c/w limits min. 750 symbol i cex i cbo i ebo v ce (sat) v be (sat) Cv ceo h fe t on t s t f r th (j-c) q r th (j-c) r r th (c-f) parameter collector cutoff current collector cutoff current emitter cutoff current collector-emitter saturation voltage base-emitter saturation voltage collector-emitter reverse voltage dc current gain switching time thermal resistance (junction to case) contact thermal resistance (case to fin) test conditions v ce =1200v, v eb =2v v cb =1200v, emitter open v eb =7v i c =30a, i b =40ma Ci c =30a (diode forward voltage) i c =30a, v ce =4v v cc =600v, i c =30a, i b1 =60ma, Ci b2 =0.6a transistor part (per 1/6 module) diode part (per 1/6 module) conductive grease applied (per 1/6 module) typ. max. 2.0 2.0 50 4.0 4.0 1.8 2.5 15 3.0 0.4 1.5 0.25
feb.1999 0 10 ? 10 ? 10 ? 10 0 10 ? 10 7 5 4 3 2 ? 10 7 5 4 3 2 2.6 3.0 3.4 3.8 4.2 4.6 v ce =4.0v t j =25? 4 10 7 5 4 3 2 3 10 7 5 4 3 2 2 10 0 10 23457 1 10 23457 2 10 v ce =4v t j =25? t j =125? v ce =10v 1 10 7 5 4 3 2 0 10 7 5 4 3 2 ? 10 0 10 23457 1 10 23457 2 10 v ce(sat) v be(sat) t j =25? t j =125? i b =60ma 50 40 30 20 10 0 01 23 4 5 t j =25? i b =10ma i b =40ma i b =20ma i b =200ma i b =100ma 0 7 5 3 2 7 5 3 2 7 5 3 2 5 4 3 2 1 444 t j =25? t j =125? i c =30a i c =10a i c =40a 1 10 7 5 4 3 2 0 10 7 5 4 3 1 10 23457 2 10 3 2 23 v cc =600v i b1 =60ma ? b2 =0.6a 45 7 2 10 t j =25? t j =125? t s t on t f performance curves common emitter output characteristics (typical) common emitter input characteristic (typical) saturation voltage characteristics (typical) collector-emitter saturation voltage (typical) switching time vs. collector current (typical) dc current gain vs. collector current (typical) collector current i c (a) dc current gain h fe collector-emitter voltage v ce (v) collector current i c (a) base current i b (a) collector-emitter saturation voltage v ce (sat) (v) saturation voltage v ce (sat) , v be (sat) (v) switching time t on , t s , t f ( m s) collector current i c (a) base-emitter voltage v be (v) base current i b (a) collector current i c (a) mitsubishi transistor modules QM30TB-24B medium power switching use insulated type
feb.1999 2 10 1 10 0 10 0 10 ? 10 ? 10 ? 10 2 10 1 10 0 10 3 10 2 10 1 10 2 10 1 10 7 5 4 3 2 0 10 7 5 4 3 2 0.4 0.8 1.2 1.6 2.0 2.4 t j =25? t j =125? 1 10 7 5 4 3 2 0 10 7 5 4 3 3457 0 10 23457 1 10 3 2 23 t s t f t j =25? t j =125? v cc =600v i b1 =60ma i c =30a 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 444 t c =25? 7 5 3 2 2 2 200 s 100 s dc 1m s 500 s 7 5 3 2 7 5 3 2 7 5 3 2 0.5 0.4 0.3 0.1 0 444 23457 0.2 3 2 457 100 90 60 40 20 0 0 160 20 40 60 80 100 120 140 80 10 70 50 30 80 20 0 0 400 40 800 1200 200 600 1000 1400 50 30 10 i b2 =2.5a t j =125? 70 60 non?epetitive collector dissipation second breakdown area switching time vs. base current (typical) reverse bias safe operating area switching time t s , t f ( m s) collector-emitter voltage v ce (v) base reverse current Ci b2 (a) forward bias safe operating area derating factor of f. b. s. o. a. collector-emitter voltage v ce (v) case temperature t c ( c) reverse collector current vs. collector-emitter reverse voltage (diode forward characteristics) (typical) transient thermal impedance characteristic (transistor) collector-emitter reverse voltage Cv ceo (v) time (s) collector current i c (a) collector current i c (a) derating factor (%) collector reverse current Ci c (a) mitsubishi transistor modules QM30TB-24B medium power switching use insulated type z th (jCc) ( c/ w)
feb.1999 0 10 1 10 0 10 ? 10 ? 10 ? 10 2 10 1 10 0 10 3 10 2 10 1 10 0 10 2 10 1 10 0 10 ? 10 ? 10 2 10 1 10 7 5 4 3 2 0 10 7 5 4 3 2 0 100 200 300 400 500 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 444 i rr t rr q rr v cc =600v i b1 =60ma ? b2 =0.6a t j =25? t j =125? 7 5 3 2 7 5 3 2 7 5 3 2 2.0 1.6 1.2 0.8 0.4 0 444 23457 3 2 t rr ( m s) i rr (a), q rr ( m c) surge collector reverse current Ci csm (a) transient thermal impedance characteristic (diode) rated surge collector reverse current (diode forward surge current) reverse recovery characteristics of free-wheel diode (typical) conduction time (cycles at 60hz) forward current i f (a) time (s) mitsubishi transistor modules QM30TB-24B medium power switching use insulated type z th (jCc) ( c/ w)
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